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Artigo de periodico
Isotopic effect on thermal physical properties of cubic SiC (2023)
Brito, Bráulio Gabriel ; Hai, Guo-Qiang ; Cândido, Ladir
Source: Computational Materials Science. Unidade: IFSC
Subjects: MÉTODO DE MONTE CARLO, FÍSICA MODERNA, SEMICONDUTORES
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ABNT
BRITO, Bráulio Gabriel e HAI, Guo-Qiang e CÂNDIDO, Ladir. Isotopic effect on thermal physical properties of cubic SiC. Computational Materials Science, v. 226, p. 112244-1-112244-6, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.commatsci.2023.112244. Acesso em: 28 abr. 2024.
APA
Brito, B. G., Hai, G. -Q., & Cândido, L. (2023). Isotopic effect on thermal physical properties of cubic SiC. Computational Materials Science, 226, 112244-1-112244-6. doi:10.1016/j.commatsci.2023.112244
NLM
Brito BG, Hai G-Q, Cândido L. Isotopic effect on thermal physical properties of cubic SiC [Internet]. Computational Materials Science. 2023 ; 226 112244-1-112244-6.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.commatsci.2023.112244
Vancouver
Brito BG, Hai G-Q, Cândido L. Isotopic effect on thermal physical properties of cubic SiC [Internet]. Computational Materials Science. 2023 ; 226 112244-1-112244-6.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.commatsci.2023.112244
Artigo de periodico
Enhancing topological Weyl Semimetals by Janus transition-metal dichalcogenides structures (2023)
Griffith, M.A.R.; Rufo, S; Dias, Alexandre Cavalheiro ; Silva, Juarez Lopes Ferreira da
Source: Computational Materials Science. Unidade: IQSC
Assunto: TOPOLOGIA
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GRIFFITH, M.A.R. et al. Enhancing topological Weyl Semimetals by Janus transition-metal dichalcogenides structures. Computational Materials Science, v. 218, p. 112004, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.commatsci.2022.112004. Acesso em: 28 abr. 2024.
APA
Griffith, M. A. R., Rufo, S., Dias, A. C., & Silva, J. L. F. da. (2023). Enhancing topological Weyl Semimetals by Janus transition-metal dichalcogenides structures. Computational Materials Science, 218, 112004. doi:10.1016/j.commatsci.2022.112004
NLM
Griffith MAR, Rufo S, Dias AC, Silva JLF da. Enhancing topological Weyl Semimetals by Janus transition-metal dichalcogenides structures [Internet]. Computational Materials Science. 2023 ; 218 112004.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.commatsci.2022.112004
Vancouver
Griffith MAR, Rufo S, Dias AC, Silva JLF da. Enhancing topological Weyl Semimetals by Janus transition-metal dichalcogenides structures [Internet]. Computational Materials Science. 2023 ; 218 112004.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.commatsci.2022.112004
Artigo de periodico
Theoretical investigation of the stability of A55-nBn nanoalloys (A, B = Al, Cu, Zn, Ag) (2022)
Silva, Lucas Rodrigues da; Morais, Felipe Orlando ; Mendonça, João Paulo Almeida de ; Galvão, Breno R. L.; Silva, Juarez Lopes Ferreira da
Source: Computational Materials Science. Unidades: IQSC, IFSC
Subjects: NANOPARTÍCULAS, QUÍMICA QUÂNTICA, ESTRUTURA ATÔMICA (QUÍMICA TEÓRICA)
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SILVA, Lucas Rodrigues da et al. Theoretical investigation of the stability of A55-nBn nanoalloys (A, B = Al, Cu, Zn, Ag). Computational Materials Science, v. 215, p. 111805-1-111805-10, 2022Tradução . . Disponível em: https://doi.org/10.1016/j.commatsci.2022.111805. Acesso em: 28 abr. 2024.
APA
Silva, L. R. da, Morais, F. O., Mendonça, J. P. A. de, Galvão, B. R. L., & Silva, J. L. F. da. (2022). Theoretical investigation of the stability of A55-nBn nanoalloys (A, B = Al, Cu, Zn, Ag). Computational Materials Science, 215, 111805-1-111805-10. doi:10.1016/j.commatsci.2022.111805
NLM
Silva LR da, Morais FO, Mendonça JPA de, Galvão BRL, Silva JLF da. Theoretical investigation of the stability of A55-nBn nanoalloys (A, B = Al, Cu, Zn, Ag) [Internet]. Computational Materials Science. 2022 ; 215 111805-1-111805-10.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.commatsci.2022.111805
Vancouver
Silva LR da, Morais FO, Mendonça JPA de, Galvão BRL, Silva JLF da. Theoretical investigation of the stability of A55-nBn nanoalloys (A, B = Al, Cu, Zn, Ag) [Internet]. Computational Materials Science. 2022 ; 215 111805-1-111805-10.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.commatsci.2022.111805
Artigo de periodico
Quantitative phase-field simulations of globulitic solidification from the critical nucleus with the effects of interface curvature and attachment kinetics (2021)
Maciel, Rodrigo Ramalho; Martorano, Marcelo de Aquino
Source: Computational Materials Science. Unidade: EP
Subjects: TRANSFERÊNCIA DE CALOR, SOLIDIFICAÇÃO, CINÉTICA
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MACIEL, Rodrigo Ramalho e MARTORANO, Marcelo de Aquino. Quantitative phase-field simulations of globulitic solidification from the critical nucleus with the effects of interface curvature and attachment kinetics. Computational Materials Science, 2021Tradução . . Disponível em: https://doi.org/10.1016/j.commatsci.2021.110672. Acesso em: 28 abr. 2024.
APA
Maciel, R. R., & Martorano, M. de A. (2021). Quantitative phase-field simulations of globulitic solidification from the critical nucleus with the effects of interface curvature and attachment kinetics. Computational Materials Science. doi:10.1016/j.commatsci.2021.110672
NLM
Maciel RR, Martorano M de A. Quantitative phase-field simulations of globulitic solidification from the critical nucleus with the effects of interface curvature and attachment kinetics [Internet]. Computational Materials Science. 2021 ;[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.commatsci.2021.110672
Vancouver
Maciel RR, Martorano M de A. Quantitative phase-field simulations of globulitic solidification from the critical nucleus with the effects of interface curvature and attachment kinetics [Internet]. Computational Materials Science. 2021 ;[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.commatsci.2021.110672
Artigo de periodico
Quantum effects on elastic constants of diamond by path-integral Monte Carlo simulations (2020)
Brito, B. G. A.; Hai, Guo-Qiang ; Cândido, Ladir
Source: Computational Materials Science. Unidade: IFSC
Subjects: TERMODINÂMICA, HIDROGÊNIO, MÉTODO DE MONTE CARLO
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ABNT
BRITO, B. G. A. e HAI, Guo-Qiang e CÂNDIDO, Ladir. Quantum effects on elastic constants of diamond by path-integral Monte Carlo simulations. Computational Materials Science, v. Fe 2020, p. 109387-109387-6, 2020Tradução . . Disponível em: https://doi.org/10.1016/j.commatsci.2019.109387. Acesso em: 28 abr. 2024.
APA
Brito, B. G. A., Hai, G. -Q., & Cândido, L. (2020). Quantum effects on elastic constants of diamond by path-integral Monte Carlo simulations. Computational Materials Science, Fe 2020, 109387-109387-6. doi:10.1016/j.commatsci.2019.109387
NLM
Brito BGA, Hai G-Q, Cândido L. Quantum effects on elastic constants of diamond by path-integral Monte Carlo simulations [Internet]. Computational Materials Science. 2020 ; Fe 2020 109387-109387-6.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.commatsci.2019.109387
Vancouver
Brito BGA, Hai G-Q, Cândido L. Quantum effects on elastic constants of diamond by path-integral Monte Carlo simulations [Internet]. Computational Materials Science. 2020 ; Fe 2020 109387-109387-6.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.commatsci.2019.109387
Artigo de periodico
Sn3O4 exfoliation process investigated by density functional theory and modern scotch-tape experiment (2019)
Freire, Rafael L. H; Masteghin, Mateus G.; Miranda, Caetano Rodrigues; Silva, Juarez Lopes Ferreira da ; Orlandi, Marcelo O.
Source: Computational Materials Science. Unidade: IQSC
Assunto: SEMICONDUTORES
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FREIRE, Rafael L. H et al. Sn3O4 exfoliation process investigated by density functional theory and modern scotch-tape experiment. Computational Materials Science, v. 170, p. 109160, 2019Tradução . . Disponível em: https://doi.org/10.1016/j.commatsci.2019.109160. Acesso em: 28 abr. 2024.
APA
Freire, R. L. H., Masteghin, M. G., Miranda, C. R., Silva, J. L. F. da, & Orlandi, M. O. (2019). Sn3O4 exfoliation process investigated by density functional theory and modern scotch-tape experiment. Computational Materials Science, 170, 109160. doi:10.1016/j.commatsci.2019.109160
NLM
Freire RLH, Masteghin MG, Miranda CR, Silva JLF da, Orlandi MO. Sn3O4 exfoliation process investigated by density functional theory and modern scotch-tape experiment [Internet]. Computational Materials Science. 2019 ; 170 109160.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.commatsci.2019.109160
Vancouver
Freire RLH, Masteghin MG, Miranda CR, Silva JLF da, Orlandi MO. Sn3O4 exfoliation process investigated by density functional theory and modern scotch-tape experiment [Internet]. Computational Materials Science. 2019 ; 170 109160.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.commatsci.2019.109160
Artigo de periodico
Molecular simulations of cement based materials: a comparison between first principles and classical force field calculations (2017)
Mutisya, Sylvia M; Almeida, James Moraes de; Miranda, Caetano Rodrigues
Source: Computational Materials Science. Unidade: IF
Subjects: RESSONÂNCIA MAGNÉTICA NUCLEAR, ESPECTROSCOPIA INFRAVERMELHA
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ABNT
MUTISYA, Sylvia M e ALMEIDA, James Moraes de e MIRANDA, Caetano Rodrigues. Molecular simulations of cement based materials: a comparison between first principles and classical force field calculations. Computational Materials Science, v. 138, p. 392-402, 2017Tradução . . Disponível em: https://doi.org/10.1016/j.commatsci.2017.07.009. Acesso em: 28 abr. 2024.
APA
Mutisya, S. M., Almeida, J. M. de, & Miranda, C. R. (2017). Molecular simulations of cement based materials: a comparison between first principles and classical force field calculations. Computational Materials Science, 138, 392-402. doi:10.1016/j.commatsci.2017.07.009
NLM
Mutisya SM, Almeida JM de, Miranda CR. Molecular simulations of cement based materials: a comparison between first principles and classical force field calculations [Internet]. Computational Materials Science. 2017 ; 138 392-402.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.commatsci.2017.07.009
Vancouver
Mutisya SM, Almeida JM de, Miranda CR. Molecular simulations of cement based materials: a comparison between first principles and classical force field calculations [Internet]. Computational Materials Science. 2017 ; 138 392-402.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.commatsci.2017.07.009
Artigo de periodico
Hosting of 'LA' POT. 3+' guest ions in type-I 'GE' clathrates: a first-principles characterization for thermoelectric applications (2016)
Gonzalez-Romero, Robert L.; Avila, Marcos A.; Antonelli, Alex; Miranda, Caetano Rodrigues
Source: Computational Materials Science. Unidade: IF
Subjects: CONDUTIVIDADE TÉRMICA, ESTRUTURA ELETRÔNICA
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ABNT
GONZALEZ-ROMERO, Robert L. et al. Hosting of 'LA' POT. 3+' guest ions in type-I 'GE' clathrates: a first-principles characterization for thermoelectric applications. Computational Materials Science, v. 122, p. 46-56, 2016Tradução . . Disponível em: https://doi.org/10.1016/j.commatsci.2016.05.013. Acesso em: 28 abr. 2024.
APA
Gonzalez-Romero, R. L., Avila, M. A., Antonelli, A., & Miranda, C. R. (2016). Hosting of 'LA' POT. 3+' guest ions in type-I 'GE' clathrates: a first-principles characterization for thermoelectric applications. Computational Materials Science, 122, 46-56. doi:10.1016/j.commatsci.2016.05.013
NLM
Gonzalez-Romero RL, Avila MA, Antonelli A, Miranda CR. Hosting of 'LA' POT. 3+' guest ions in type-I 'GE' clathrates: a first-principles characterization for thermoelectric applications [Internet]. Computational Materials Science. 2016 ; 122 46-56.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.commatsci.2016.05.013
Vancouver
Gonzalez-Romero RL, Avila MA, Antonelli A, Miranda CR. Hosting of 'LA' POT. 3+' guest ions in type-I 'GE' clathrates: a first-principles characterization for thermoelectric applications [Internet]. Computational Materials Science. 2016 ; 122 46-56.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.commatsci.2016.05.013
Artigo de periodico
Structural formation of binary PtCu clusters: a density functional theory investigation (2015)
Chaves, Anderson Silva; Rondina, Gustavo Garcia; Piotrowski, Maurício Jeomar; Silva, Juarez Lopes Ferreira da
Source: Computational Materials Science. Unidade: IQSC
Assunto: QUÍMICA
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ABNT
CHAVES, Anderson Silva et al. Structural formation of binary PtCu clusters: a density functional theory investigation. Computational Materials Science, v. 98, p. 278-286, 2015Tradução . . Disponível em: https://doi.org/10.1016/j.commatsci.2014.11.022. Acesso em: 28 abr. 2024.
APA
Chaves, A. S., Rondina, G. G., Piotrowski, M. J., & Silva, J. L. F. da. (2015). Structural formation of binary PtCu clusters: a density functional theory investigation. Computational Materials Science, 98, 278-286. doi:10.1016/j.commatsci.2014.11.022
NLM
Chaves AS, Rondina GG, Piotrowski MJ, Silva JLF da. Structural formation of binary PtCu clusters: a density functional theory investigation [Internet]. Computational Materials Science. 2015 ; 98 278-286.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.commatsci.2014.11.022
Vancouver
Chaves AS, Rondina GG, Piotrowski MJ, Silva JLF da. Structural formation of binary PtCu clusters: a density functional theory investigation [Internet]. Computational Materials Science. 2015 ; 98 278-286.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.commatsci.2014.11.022
Artigo de periodico
Structural differences of amorphous 'CU IND.65''ZR IND.35' between rapidly quenched and topologically destabilized crystalline 'CU' and 'ZR' metals by molecular dynamics simulations (2015)
Oliveira, Marcelo Falcão de ; Almyras, G. A.; Evangelakis, G. A.
Source: Computational Materials Science. Unidade: EESC
Subjects: COBRE, TOPOLOGIA, CLUSTERS
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OLIVEIRA, Marcelo Falcão de e ALMYRAS, G. A. e EVANGELAKIS, G. A. Structural differences of amorphous 'CU IND.65''ZR IND.35' between rapidly quenched and topologically destabilized crystalline 'CU' and 'ZR' metals by molecular dynamics simulations. Computational Materials Science, v. 104, p. 92-97, 2015Tradução . . Disponível em: https://doi.org/10.1016/j.commatsci.2015.03.041. Acesso em: 28 abr. 2024.
APA
Oliveira, M. F. de, Almyras, G. A., & Evangelakis, G. A. (2015). Structural differences of amorphous 'CU IND.65''ZR IND.35' between rapidly quenched and topologically destabilized crystalline 'CU' and 'ZR' metals by molecular dynamics simulations. Computational Materials Science, 104, 92-97. doi:10.1016/j.commatsci.2015.03.041
NLM
Oliveira MF de, Almyras GA, Evangelakis GA. Structural differences of amorphous 'CU IND.65''ZR IND.35' between rapidly quenched and topologically destabilized crystalline 'CU' and 'ZR' metals by molecular dynamics simulations [Internet]. Computational Materials Science. 2015 ; 104 92-97.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.commatsci.2015.03.041
Vancouver
Oliveira MF de, Almyras GA, Evangelakis GA. Structural differences of amorphous 'CU IND.65''ZR IND.35' between rapidly quenched and topologically destabilized crystalline 'CU' and 'ZR' metals by molecular dynamics simulations [Internet]. Computational Materials Science. 2015 ; 104 92-97.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.commatsci.2015.03.041
Artigo de periodico
Simulation of the Barkhausen noise using random field ising model (2009)
Pérez-Benitez, José Alberto ; Capo-Sanchez, Julio ; Padovese, Linilson Rodrigues
Source: Computational Materials Science. Unidade: EP
Subjects: ACÚSTICA (SIMULAÇÃO COMPUTACIONAL), ENSAIOS MAGNÉTICOS, ENSAIOS NÃO DESTRUTIVOS
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PÉREZ-BENITEZ, José Alberto e CAPO-SANCHEZ, Julio e PADOVESE, Linilson Rodrigues. Simulation of the Barkhausen noise using random field ising model. Computational Materials Science, v. 44, n. 3, p. 850-857, 2009Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/76bb61f5-02cc-4e65-9100-1259b887e6db/Padovese-2009-Simulation%20of%20the%20Barkhausen%20Noise%20using%20random%20field%20Ising%20model%20with%20long-range%20interaction.pdf. Acesso em: 28 abr. 2024.
APA
Pérez-Benitez, J. A., Capo-Sanchez, J., & Padovese, L. R. (2009). Simulation of the Barkhausen noise using random field ising model. Computational Materials Science, 44( 3), 850-857. Recuperado de https://repositorio.usp.br/directbitstream/76bb61f5-02cc-4e65-9100-1259b887e6db/Padovese-2009-Simulation%20of%20the%20Barkhausen%20Noise%20using%20random%20field%20Ising%20model%20with%20long-range%20interaction.pdf
NLM
Pérez-Benitez JA, Capo-Sanchez J, Padovese LR. Simulation of the Barkhausen noise using random field ising model [Internet]. Computational Materials Science. 2009 ; 44( 3): 850-857.[citado 2024 abr. 28 ] Available from: https://repositorio.usp.br/directbitstream/76bb61f5-02cc-4e65-9100-1259b887e6db/Padovese-2009-Simulation%20of%20the%20Barkhausen%20Noise%20using%20random%20field%20Ising%20model%20with%20long-range%20interaction.pdf
Vancouver
Pérez-Benitez JA, Capo-Sanchez J, Padovese LR. Simulation of the Barkhausen noise using random field ising model [Internet]. Computational Materials Science. 2009 ; 44( 3): 850-857.[citado 2024 abr. 28 ] Available from: https://repositorio.usp.br/directbitstream/76bb61f5-02cc-4e65-9100-1259b887e6db/Padovese-2009-Simulation%20of%20the%20Barkhausen%20Noise%20using%20random%20field%20Ising%20model%20with%20long-range%20interaction.pdf
Artigo de periodico
Structural and electronic properties of Ti impurities in SiC: an ab initio investigation (2004)
Barbosa, K O; Assali, L. V. C. ; Machado, Wanda Valle Marcondes; Justo Filho, João Francisco
Source: Computational Materials Science. Unidades: IF, EP
Subjects: MATÉRIA CONDENSADA, ESTRUTURA ELETRÔNICA, PROPRIEDADES DOS MATERIAIS
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ABNT
BARBOSA, K O et al. Structural and electronic properties of Ti impurities in SiC: an ab initio investigation. Computational Materials Science, 2004Tradução . . Disponível em: https://doi.org/10.1016/j.commatsci.2004.01.008. Acesso em: 28 abr. 2024.
APA
Barbosa, K. O., Assali, L. V. C., Machado, W. V. M., & Justo Filho, J. F. (2004). Structural and electronic properties of Ti impurities in SiC: an ab initio investigation. Computational Materials Science. doi:10.1016/j.commatsci.2004.01.008
NLM
Barbosa KO, Assali LVC, Machado WVM, Justo Filho JF. Structural and electronic properties of Ti impurities in SiC: an ab initio investigation [Internet]. Computational Materials Science. 2004 ;[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.commatsci.2004.01.008
Vancouver
Barbosa KO, Assali LVC, Machado WVM, Justo Filho JF. Structural and electronic properties of Ti impurities in SiC: an ab initio investigation [Internet]. Computational Materials Science. 2004 ;[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.commatsci.2004.01.008
Artigo de periodico
Ab initio investigations on the dislocation core properties in zinc-blende semiconductors (2004)
Nunes, Ricardo W.; Assali, L. V. C. ; Justo Filho, João Francisco
Source: Computational Materials Science. Unidades: IF, EP
Subjects: MATERIAIS, SEMICONDUTORES, ESTRUTURA ELETRÔNICA, BLENDAS
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ABNT
NUNES, Ricardo W. e ASSALI, L. V. C. e JUSTO FILHO, João Francisco. Ab initio investigations on the dislocation core properties in zinc-blende semiconductors. Computational Materials Science, 2004Tradução . . Disponível em: https://doi.org/10.1016/j.commatsci.2004.01.010. Acesso em: 28 abr. 2024.
APA
Nunes, R. W., Assali, L. V. C., & Justo Filho, J. F. (2004). Ab initio investigations on the dislocation core properties in zinc-blende semiconductors. Computational Materials Science. doi:10.1016/j.commatsci.2004.01.010
NLM
Nunes RW, Assali LVC, Justo Filho JF. Ab initio investigations on the dislocation core properties in zinc-blende semiconductors [Internet]. Computational Materials Science. 2004 ;[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.commatsci.2004.01.010
Vancouver
Nunes RW, Assali LVC, Justo Filho JF. Ab initio investigations on the dislocation core properties in zinc-blende semiconductors [Internet]. Computational Materials Science. 2004 ;[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.commatsci.2004.01.010
Artigo de periodico
Breaking of gold nanowires (2004)
Silva, Edison Z da; Silva, Antonio Jose Roque da; Fazzio, Adalberto
Source: Computational Materials Science. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, VÁCUO, MICROSCOPIA ELETRÔNICA
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ABNT
SILVA, Edison Z da e SILVA, Antonio Jose Roque da e FAZZIO, Adalberto. Breaking of gold nanowires. Computational Materials Science, 2004Tradução . . Disponível em: https://doi.org/10.1016/j.commatsci.2004.01.011. Acesso em: 28 abr. 2024.
APA
Silva, E. Z. da, Silva, A. J. R. da, & Fazzio, A. (2004). Breaking of gold nanowires. Computational Materials Science. doi:10.1016/j.commatsci.2004.01.011
NLM
Silva EZ da, Silva AJR da, Fazzio A. Breaking of gold nanowires [Internet]. Computational Materials Science. 2004 ;[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.commatsci.2004.01.011
Vancouver
Silva EZ da, Silva AJR da, Fazzio A. Breaking of gold nanowires [Internet]. Computational Materials Science. 2004 ;[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.commatsci.2004.01.011
Artigo de periodico
Nickel impurities in diamond: a FP-LAPW investigation (2004)
Larico, Rolando; Assali, L. V. C. ; Machado, Wanda Valle Marcondes; Justo Filho, João Francisco
Source: Computational Materials Science. Unidades: IF, EP
Subjects: RESSONÂNCIA PARAMAGNÉTICA ELETRÔNICA, ESTRUTURA ELETRÔNICA, PROPRIEDADES DOS MATERIAIS
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ABNT
LARICO, Rolando et al. Nickel impurities in diamond: a FP-LAPW investigation. Computational Materials Science, 2004Tradução . . Disponível em: https://doi.org/10.1016/j.commatsci.2004.01.009. Acesso em: 28 abr. 2024.
APA
Larico, R., Assali, L. V. C., Machado, W. V. M., & Justo Filho, J. F. (2004). Nickel impurities in diamond: a FP-LAPW investigation. Computational Materials Science. doi:10.1016/j.commatsci.2004.01.009
NLM
Larico R, Assali LVC, Machado WVM, Justo Filho JF. Nickel impurities in diamond: a FP-LAPW investigation [Internet]. Computational Materials Science. 2004 ;[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.commatsci.2004.01.009
Vancouver
Larico R, Assali LVC, Machado WVM, Justo Filho JF. Nickel impurities in diamond: a FP-LAPW investigation [Internet]. Computational Materials Science. 2004 ;[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/j.commatsci.2004.01.009
Artigo de periodico
The spin s=7/2 FCC ferromagnet: comparison between cluster variation method and Monte Carlo calculations (2001)
Schön, Cláudio Geraldo ; Inden, Gerhard
Source: Computational Materials Science. Unidade: EP
Assunto: ENGENHARIA METALÚRGICA
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ABNT
SCHÖN, Cláudio Geraldo e INDEN, Gerhard. The spin s=7/2 FCC ferromagnet: comparison between cluster variation method and Monte Carlo calculations. Computational Materials Science, v. 20, p. 98-106, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0927-0256(00)00131-2. Acesso em: 28 abr. 2024.
APA
Schön, C. G., & Inden, G. (2001). The spin s=7/2 FCC ferromagnet: comparison between cluster variation method and Monte Carlo calculations. Computational Materials Science, 20, 98-106. doi:10.1016/s0927-0256(00)00131-2
NLM
Schön CG, Inden G. The spin s=7/2 FCC ferromagnet: comparison between cluster variation method and Monte Carlo calculations [Internet]. Computational Materials Science. 2001 ; 20 98-106.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/s0927-0256(00)00131-2
Vancouver
Schön CG, Inden G. The spin s=7/2 FCC ferromagnet: comparison between cluster variation method and Monte Carlo calculations [Internet]. Computational Materials Science. 2001 ; 20 98-106.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/s0927-0256(00)00131-2
Artigo de periodico
Ab initio studies of the 'Si IND.1-X' 'Ge IND.X' alloy and its intrinsic defects (2001)
Venezuela, P; Silva, Antonio Jose Roque da; Silva, Cesar da; Dalpian, G. M.; Fazzio, Adalberto
Source: Computational Materials Science. Unidade: IF
Subjects: SEMICONDUTORES, SISTEMAS DINÂMICOS, ESTABILIDADE DE SISTEMAS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
VENEZUELA, P et al. Ab initio studies of the 'Si IND.1-X' 'Ge IND.X' alloy and its intrinsic defects. Computational Materials Science, v. 22, n. 1-2, p. 62-66, 2001Tradução . . Acesso em: 28 abr. 2024.
APA
Venezuela, P., Silva, A. J. R. da, Silva, C. da, Dalpian, G. M., & Fazzio, A. (2001). Ab initio studies of the 'Si IND.1-X' 'Ge IND.X' alloy and its intrinsic defects. Computational Materials Science, 22( 1-2), 62-66.
NLM
Venezuela P, Silva AJR da, Silva C da, Dalpian GM, Fazzio A. Ab initio studies of the 'Si IND.1-X' 'Ge IND.X' alloy and its intrinsic defects. Computational Materials Science. 2001 ; 22( 1-2): 62-66.[citado 2024 abr. 28 ]
Vancouver
Venezuela P, Silva AJR da, Silva C da, Dalpian GM, Fazzio A. Ab initio studies of the 'Si IND.1-X' 'Ge IND.X' alloy and its intrinsic defects. Computational Materials Science. 2001 ; 22( 1-2): 62-66.[citado 2024 abr. 28 ]
Artigo de periodico
Influence of surface degrees of freedom on the adsorption of Ge ad-atoms on Si(100) (2001)
Dalpian, G. M.; Fazzio, Adalberto; Silva, Antonio Jose Roque da
Source: Computational Materials Science. Unidade: IF
Subjects: MATERIAIS, DENSIDADE, SUPERFÍCIE FÍSICA, MICROSCOPIA ELETRÔNICA DE VARREDURA, ABSORÇÃO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
DALPIAN, G. M. e FAZZIO, Adalberto e SILVA, Antonio Jose Roque da. Influence of surface degrees of freedom on the adsorption of Ge ad-atoms on Si(100). Computational Materials Science, v. 22, n. 1-2, p. 19-23, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0927-0256(01)00158-6. Acesso em: 28 abr. 2024.
APA
Dalpian, G. M., Fazzio, A., & Silva, A. J. R. da. (2001). Influence of surface degrees of freedom on the adsorption of Ge ad-atoms on Si(100). Computational Materials Science, 22( 1-2), 19-23. doi:10.1016/s0927-0256(01)00158-6
NLM
Dalpian GM, Fazzio A, Silva AJR da. Influence of surface degrees of freedom on the adsorption of Ge ad-atoms on Si(100) [Internet]. Computational Materials Science. 2001 ; 22( 1-2): 19-23.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/s0927-0256(01)00158-6
Vancouver
Dalpian GM, Fazzio A, Silva AJR da. Influence of surface degrees of freedom on the adsorption of Ge ad-atoms on Si(100) [Internet]. Computational Materials Science. 2001 ; 22( 1-2): 19-23.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1016/s0927-0256(01)00158-6

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